Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures
نویسندگان
چکیده
منابع مشابه
Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions
The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO subs...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2016
ISSN: 2046-2069
DOI: 10.1039/c6ra00798h